Chemical bonding within AIII BVI materials under uniaxial compression

Abstract

The work provides a comprehensive explanation of the nature of chemical bonding through quantum chemical topology for multilayers of AIIIBVI compounds, such as GaSe, InSe, and GaTe, spanning pressures from 0 GPa to 30 GPa. These compounds are subjected to pressure orthogonal to the multilayers. Quantum chemical topological indices indicate that uniaxial pressure induces changes in hybridisation, leading to the disappearance of interlayer van der Waals forces. The distinct nature of the elements within the compounds results in different pressures at which van der Waals interactions disappear, as revealed by non-covalent interaction analysis. The presence or absence of chemical bonding is assessed by quantum topological indices as Espinosa indices, charge density distribution difference, and crystal orbital Hamilton populations. The varying changes in hybridisation, as indicated by topological indices, are corroborated by variations in the population of the electronic projected density of states. Ultimately, the type of chemical bonding is identified through the Espinosa indices in the field of Bader theory. This analysis confirms the existence of shared shell bonds between AIII and BVI atoms in vacuum that goes to an intermediate bond between shared and closed shells called the transition zone with increasing pressure. The implications and importance of this work extend beyond the presented results. It suggests that many other classes of two-dimensional materials may undergo phase transitions under uniaxial stress, leading to the formation of new phases with potentially interesting electronic properties.